logo BOROGAN project BORon nitride as heat spreader On GAN HEMT RF transistors

Legal Notice


All rights reserved © Copyright 2017 III-V Lab, France. You are authorized to copy documents published by III-V Lab and BOROGAN consortium on the World Wide Web for non commercial activities only provided that all copyright and other proprietary notices shall be retained on all reproductions, and you accept and comply with the following:


Note that any product, process or technology described in these document may be the subject of other Intellectual Property Rights reserved by Nokia, Thales and CEA or a third party. No right to use any such Intellectual Property Right is granted hereunder.


This information is PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESSED OR IMPLIED, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS. This information may include technical inaccuracies or typographical errors. Changes may be periodically made to the information herein and shall be incorporated in new editions.


III-V Lab may changes the information incorporated provided on this website at any time and without notice.


Groupement d'Intérêt Economique (GIE)
Registered trade register : 478 651 284 R.C.S. EVRY
Registered office : Campus Polytechnique - 1 avenue Augustin Fresnel - 91767 PALAISEAU CEDEX - FRANCE
Share capital : 5 000 000 euros
Tax number : FR 08 478 651 284
Contact: Myriam Oudart
Tel: +33 (0)
email: myriam.oudart@3-5lab.fr

This web site is lodge by : KABIA
13 av Vismara - Rce Jardin de Chambrun - 06100 NICE - FRANCE
Tel: 0811 090 508