|
BORon nitride as heat spreader On GAN HEMT RF transistors |
|
III-V Lab is a private research lab set-up between Thales, Nokia and CEA/Leti under the Specific French legal entity
(Economic Interest Grouping), with 120 research staff including 20 PhD students. III-V Lab focus on III-V semiconductors technologies development and their integration with Silicon circuits and micro-systems for different applications as Defence, Security, Space, Aerospace, Transportation, Optical and Wireless Networks and Communication Technologies. The in-house technology development cycle includes Multi Physics Modelling, Material Growth (Epitaxy), Wafer Processing and Measurement; In BOROGaN project III-V Lab will grow GaN HEMT heterostructure, process microwave HEMT devices and do the full DC and microwave electrical characterization. Moreover III-V Lab is in charge of the project management. |
III-V Lab building in Palaiseau |
 | Top | Legal Information | Site Map |